Hydrogenated Dilute Nitride Semiconductors: Theory, Properties, and Applications

English | 2015 | ISBN: 9814463450 | 316 pages | PDF | 13,2 MB

The nonlinear behavior of nitrogen and the passivation effect of hydrogen in dilute nitrides open the way to the manufacture of a new class of nanostructured devices with in-plane variation of the optical band gap.

This book addresses the modifications of the electronic structure and of the optical and structural properties induced in these technologically important semiconductors by atomic hydrogen irradiation.




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